AO4612 Alpha & Omega Semiconductor Inc, AO4612 Datasheet
AO4612
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AO4612 Summary of contents
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... AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description The AO4612 uses advanced trench technology MOSFETs to provide excellent R DS(ON) charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. SOIC-8 Top View Bottom View Pin1 Absolute Maximum Ratings T =25°C unless otherwise noted ...
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... AO4612 N Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...
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... AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 20 10V 10V 5.0V 5. (Volts) (Volts Fig 1: On-Region Characteristics Fig 1: On-Region Characteristics 100 100 =4.5V =4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 140 120 100 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...
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... AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL =30V =30V 4. (nC) (nC Figure 7: Gate-Charge Characteristics Figure 7: Gate-Charge Characteristics 100.0 100.0 10.0 10 DS(ON) DS(ON) 1.0 1.0 0.1 0 =150°C =150°C J(Max) J(Max =25°C =25° 0.0 0.0 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe ...
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... AO4612 + + VDC VDC - - Vgs Vgs Ig Ig Vds Vds Vgs Vgs Rg Rg Vgs Vgs L L Vds Vds Id Vgs Rg DUT Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Gate Charge Test Circuit & Waveform ...
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... AO4612 P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...
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... AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 20 20 -10V -10V -4.5V -4. -3.5V -3. (Volts) (Volts Fig 1: On-Region Characteristics Fig 1: On-Region Characteristics 130 130 120 120 V V =-4.5V =-4. 110 110 100 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 125° ...
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... AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL =-30V =-30V =-3.2A =-3. (nC) (nC Figure 7: Gate-Charge Characteristics Figure 7: Gate-Charge Characteristics 100.0 100.0 10.0 10 DS(ON) DS(ON) limited limited 1.0 1.0 0.1 0.1 10s 10s T T =150°C =150°C J(Max) J(Max =25°C =25° 0.0 0.0 ...
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... AO4612 - - VDC VDC + + Vgs Vgs Ig Ig Vds Vds Vgs Vgs Rg Rg Vgs Vgs L Vds Id Vgs Rg DUT Vgs Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Gate Charge Test Circuit & Waveform ...