SI6963BDQ-T1-E3 Vishay, SI6963BDQ-T1-E3 Datasheet

MOSFET P-CH DUAL 20V 3.4A 8TSSOP

SI6963BDQ-T1-E3

Manufacturer Part Number
SI6963BDQ-T1-E3
Description
MOSFET P-CH DUAL 20V 3.4A 8TSSOP
Manufacturer
Vishay
Datasheet

Specifications of SI6963BDQ-T1-E3

Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 3.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Source
Resistance Drain-source Rds (on)
0.045 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.4 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Module Configuration
Dual
Continuous Drain Current Id
-3.9A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
45mohm
Rds(on) Test Voltage Vgs
-4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI6963BDQ-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6963BDQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 860
Part Number:
SI6963BDQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI6963BDQ-T1-E3
Quantity:
555
Notes:
a. Surface Mounted on FR4 board.
Document Number: 72772
S-81221-Rev. B, 02-Jun-08
Ordering Information: Si6963BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 20
(V)
D
G
S
S
1
1
1
1
1
2
3
4
Si6963BDQ
0.045 at V
0.080 at V
TSSOP-8
Top View
R
DS(on)
J
a
= 150 °C)
Dual P-Channel 2.5-V (G-S) MOSFET
GS
GS
a
= - 4.5 V
= - 2.5 V
(Ω)
8
7
6
5
a
D
S
S
G
2
2
2
2
a
A
I
= 25 °C, unless otherwise noted
- 3.9
- 3.0
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free
Symbol
Symbol
T
G
R
R
J
V
V
1
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
P-Channel MOSFET
stg
D
S
1
1
Typical
- 3.9
- 3.1
- 1.0
10 s
1.13
0.73
125
90
67
- 55 to 150
± 12
- 20
- 30
Steady State
G
Maximum
2
- 0.75
P-Channel MOSFET
- 3.4
- 2.7
0.83
0.53
110
150
80
Vishay Siliconix
Si6963BDQ
D
S
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SI6963BDQ-T1-E3

SI6963BDQ-T1-E3 Summary of contents

Page 1

... Si6963BDQ Top View Ordering Information: Si6963BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si6963BDQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72772 S-81221-Rev. B, 02-Jun-08 1200.0 1000 4 12.0 16.0 20.0 12.0 15.0 18 °C J 0.9 1.2 1.5 Si6963BDQ Vishay Siliconix C iss 800.0 600.0 400.0 C oss 200.0 C rss 0.0 0.0 4.0 8.0 12 Drain-to-Source Voltage (V) DS Capacitance 1.6 ...

Page 4

... Si6963BDQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 50.0 - 25.0 0.0 25.0 50 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75.0 100.0 125.0 150.0 100 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72772. Document Number: 72772 S-81221-Rev. B, 02-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si6963BDQ Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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