FDG6316P Fairchild Semiconductor, FDG6316P Datasheet - Page 4

• Manufacturer Part Number: FDG6316P
• Description: MOSFET P-CH 12V 0.7A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG6316P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 700mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 146pF @ 6V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.27 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 2.5 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.7 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6316P

©2011 Fairchild Semiconductor Corporation
FDG6316P Rev.D1
Typical Characteristics
0.01
0.1
10
5
4
3
2
1
0
1
Figure 9. Maximum Safe Operating Area.
0.001
0.1
0
Figure 7. Gate Charge Characteristics.
0.01
0.1
0.0001
1
I
D
R
SINGLE PULSE
R
= -0.7A
DS(ON)
θJA
V
T
GS
A
= 415
= 25
= -4.5V
LIMIT
D = 0.5
0.2
0.1
0.05
o
o
0.5
C/W
C
0.02
0.01
-V
DS
SINGLE PULSE
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
0.001
DC
1s
100ms
1
Figure 11. Transient Thermal Response Curve.
10ms
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
V
DS
1ms
= -4V
10
100 µ s
1.5
0.01
-8V
-6V
2
100
t
1
, TIME (sec)
0.1
4
250
200
150
100
10
50
8
6
4
2
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
2
0.01
-V
Power Dissipation.
DS
1
, DRAIN TO SOURCE VOLTAGE (V)
4
0.1
C
C
C
t
ISS
OSS
RSS
1
, TIME (sec)
6
P(pk)
Duty Cycle, D = t
T
R
J
1
R
θJA
- T
10
θJA
(t) = r(t) * R
A
8
= 415
t
= P * R
1
t
2
SINGLE PULSE
R
www.fairchildsemi.com
θJA
T
o
C/W
A
10
= 415°C/W
θJA
= 25°C
10
1
θJA
(t)
f = 1 MHz
V
/ t
GS
2
= 0 V
100
100
12