FDC6306P Fairchild Semiconductor, FDC6306P Datasheet

FDC6306P

Manufacturer Part Number

FDC6306P

Description

MOSFET P-CHAN DUAL 20V SSOT6

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDC6306P.pdf (5 pages)

Specifications of FDC6306P

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

170 mOhm @ 1.9A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

1.9A

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

4.2nC @ 4.5V

Input Capacitance (ciss) @ Vds

441pF @ 10V

Power - Max

700mW

Mounting Type

Surface Mount

Package / Case

6-SSOT, SuperSOT-6

Configuration

Dual

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.17 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

4 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

1.9 A

Power Dissipation

960 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Module Configuration

Dual

Continuous Drain Current Id

-1.9A

Drain Source Voltage Vds

-20V

On Resistance Rds(on)

127mohm

Rds(on) Test Voltage Vgs

-4.5V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDC6306PTR

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Current page: 1 of 5
Download datasheet (62Kb)

1999 Fairchild Semiconductor Corporation

General Description

These P-Channel 2.5V specified MOSFETs are produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain low gate charge for

superior switching performance.

These devices have been designed to offer exceptional

power dissipation in a very small footprint for applications

where the bigger more expensive SO-8 and TSSOP-8

packages are impractical.

Applications

•

FDC6306P

Dual P-Channel 2.5V Specified PowerTrench

Absolute Maximum Ratings

Thermal Characteristics

Package Outlines and Ordering Information

Symbol

Load switch

Battery protection

Power management

DSS

GSS

, T

Device Marking

stg

SuperSOT

306

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

-6

- Pulsed

- Continuous

FDC6306P

Parameter

Device

= 25°C unless otherwise noted

Reel Size

7’’

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

Features

•

than standard SO-8); low profile (1mm thick).

-1.9 A, -20 V. R

Low gate charge (3 nC typical).

Fast switching speed.

low R

SuperSOT TM -6 package: small footprint (72% smaller

High performance trench technology for extremely

DS(ON)

MOSFET

Tape Width

DS(on)

-55 to +150

Ratings

8mm

= 0.170

0.96

= 0.250

-1.9

130

-20

0.9

0.7

-5

@ V

February 1999

Quantity

3000 units

= -2.5 V

= -4.5 V

Units

C/W

FDC6306P Rev. C

Related parts for FDC6306P

FDC6306P Summary of contents

Page 1

... A Parameter (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Device Reel Size FDC6306P 7’’ February 1999 = 0.170 @ V = -4.5 V DS(on 0.250 @ V = -2.5 V DS(on Ratings Units - -1 0.96 W 0.9 0.7 -55 to +150 C 130 C/W 60 C/W Tape Width Quantity 8mm 3000 units FDC6306P Rev. C ...

Page 2

... Min Typ Max Units -20 V -18 mV 100 nA -100 nA -0.4 -0.9 -1 mV/ C 0.127 0.170 0.182 0.270 0.194 0.250 - 441 pF 127 4.2 nC 0.7 nC 0.8 nC -0.8 A -0.8 -1 180 C/W when 2 mounted on a 0.0015 in pad of 2 oz. copper. FDC6306P Rev ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current = - -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( - 25° 25° GATE TO SOURCE VOLT 125° °C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLT AGE (V) SD and Temperature. FDC6306P Rev 1.4 ...

Page 4

... Transient themal response will change depending on the circuit board design. C iss C oss C rss 0 DRAIN T O SOURCE VOLTAGE (V) DS SINGLE PULSE R =180°C 25° 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 180 °C/W JA P(pk ( Duty Cycle 100 300 FDC6306P Rev 300 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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