FDC6303N Fairchild Semiconductor, FDC6303N Datasheet - Page 2
![IC FET DGTL N-CH DUAL 25V SSOT6](/photos/5/44/54442/supersot-6_pkg_sml.jpg)
FDC6303N
Manufacturer Part Number
FDC6303N
Description
IC FET DGTL N-CH DUAL 25V SSOT6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDC6303N.pdf
(5 pages)
Specifications of FDC6303N
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
450 mOhm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
680mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
2.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
50pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
680mA
Drain Source Voltage Vds
25V
On Resistance Rds(on)
450mohm
Rds(on) Test Voltage Vgs
4.5V
Rohs Compliant
Yes
Threshold Voltage Vgs Typ
800mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6303NTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC6303N
Manufacturer:
Fairchild Semiconductor
Quantity:
47 057
Part Number:
FDC6303N
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
DMOS Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
GSS
D(ON)
D(on)
r
D(off)
f
S
FS
BV
V
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
design while R
DSS
GS(th)
JA
DSS
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
/ T
J
J
a. 140
CA
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
Gate Threshold Voltage Temp.Coefficient
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Source Current
Drain-Source Diode Forward Voltage
2oz copper.
is determined by the user's board design. R
O
C/W on a 0.125 in
(Note 2)
2
pad of
(Note 2)
JA
shown below for single device operation on FR-4 in still air.
b. 180
of 2oz copper.
(T
O
C/W on a 0.005 in
A
= 25
Conditions
V
I
V
V
I
V
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250 µA, Referenced to 25
= 250 µA, Referenced to 25
= 20 V, V
= V
= 5 V, I
= 10 V, V
= 5 V, I
= 0 V, I
= 8 V, V
= 4.5 V, I
= 2.7 V, I
= 2.7 V, V
= 6 V, I
= 4.5 V, R
= 4.5 V
= 0 V, I
O
GS
2
C unless otherwise noted )
of pad
, I
D
D
D
D
D
S
= 0.5 A
DS
= 250 µA
= 0.5 A
= 250 µA
= 0.5 A,
D
D
GS
GS
= 0.5 A,
= 0 V
DS
GEN
= 0.5 A
= 0.2 A
= 0 V
= 0 V,
= 5 V
= 50
(Note 2)
T
T
J
J
= 55°C
=125°C
o
o
C
C
0.65
Min
0.5
25
0.33
0.52
0.44
1.45
1.64
0.38
0.45
0.83
Typ
-2.6
0.8
8.5
26
50
28
17
13
9
3
Max
0.45
100
1.5
0.8
0.6
2.3
0.3
1.2
10
18
30
25
1
6
JC
is guaranteed by
FDC6303N Rev.C
mV /
mV /
Units
µA
µA
nA
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
pF
pF
pF
A
V
o
o
C
C