FDG6332C_F085 Fairchild Semiconductor, FDG6332C_F085 Datasheet - Page 4
![MOSFET N/P-CH 20V SC70-6](/photos/5/44/54450/fdg6332c_f085_sml.jpg)
FDG6332C_F085
Manufacturer Part Number
FDG6332C_F085
Description
MOSFET N/P-CH 20V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDG6332C_F085.pdf
(8 pages)
Specifications of FDG6332C_F085
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 700mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
700mA, 600mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
113pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V @ Q1
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.7 A @ Q1 or 0.6 A @ Q2
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG6332C_F085TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG6332C_F085
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics: N-Channel
1.6
1.4
1.2
0.8
0.6
2.5
1.5
0.5
4
3
2
1
0
1
2
1
0
Figure 3. On-Resistance Variation with
0
-50
0.5
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
GS
V
3.5V
V
=4.5V
DS
I
GS
D
= 5V
=0.7A
-25
= 4.5V
1
V
1
T
V
0
GS
3.0V
J
DS
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
25
1.5
50
2
T
A
= -55
2.5V
2
75
o
C
125
100
o
C)
3
o
C
25
2.5
o
C
2.0V
125
150
4
3
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
0.8
0.6
0.4
0.2
0.1
1.8
1.6
1.4
1.2
0.8
10
0
1
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
0
0
V
GS
Drain Current and Gate Voltage.
V
GS
T
= 0V
A
= 2.5V
= 25
0.2
Gate-to-Source Voltage.
V
o
SD
C
, BODY DIODE FORWARD VOLTAGE (V)
V
2
1
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
0.4
T
I
= 125
D
A
, DRAIN CURRENT (A)
= 125
3.0V
o
C
o
C
0.6
3
2
3.5V
25
o
C
0.8
-55
4.0V
3
4
FDG6332C_F085 Rev C2 (W)
o
C
I
D
1
=0.4A
4.5V
1.2
4
5