SI1029X-T1-E3 Vishay, SI1029X-T1-E3 Datasheet - Page 7
![MOSFET N/P-CH COMPL 60V SOT563F](/photos/5/42/54218/pkg_5880_sml.jpg)
SI1029X-T1-E3
Manufacturer Part Number
SI1029X-T1-E3
Description
MOSFET N/P-CH COMPL 60V SOT563F
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI1029X-T1-E3
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
305mA, 190mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Input Capacitance (ciss) @ Vds
30pF @ 25V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.4ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1029X-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
N- OR P-CHANNEL TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71435.
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
0.01
0.1
2
1
10
-4
0.2
0.1
Duty Cycle = 0.5
0.05
0.02
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
-1
A
= 25 °C, unless otherwise noted)
1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
t
A
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
t
t
1
2
(t)
= 500 °C/W
Si1029X
www.vishay.com
6
0
0
7