SI1553DL-T1-E3 Vishay, SI1553DL-T1-E3 Datasheet - Page 5
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SI1553DL-T1-E3
Manufacturer Part Number
SI1553DL-T1-E3
Description
MOSFET N/P-CH 20V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI1553DL-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
385 mOhm @ 660ma, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
660mA, 410mA
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
1.2nC @ 4.5V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.385 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.66 A @ N Channel or 0.41 A @ P Channel
Power Dissipation
270 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
660mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
995mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1553DL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1553DL-T1-E3
Manufacturer:
CRUSTRL
Quantity:
6
Part Number:
SI1553DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 71078
S-21374—Rev. D, 12-Aug-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.1
0.0
0.0
2
1
10
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.5
On-Resistance vs. Drain Current
0.2
V
Single Pulse
DS
Output Characteristics
V
- Drain-to-Source Voltage (V)
I
GS
1.0
D
- Drain Current (A)
= 2.5 V
0.4
1 V
10
1.5
V
- 3
GS
0.6
Normalized Thermal Transient Impedance, Junction-to-Foot
= 5 thru 3 V
2.0
V
V
2.5 V
1.5 V
GS
GS
2 V
0.8
= 3.6 V
= 4.5 V
2.5
Square Wave Pulse Duration (sec)
10
1.0
3.0
- 2
10
- 1
100
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
0.0
0
C
rss
0.5
V
4
GS
V
Transfer Characteristics
DS
C
- Gate-to-Source Voltage (V)
oss
1.0
- Drain-to-Source Voltage (V)
1
Capacitance
8
Vishay Siliconix
1.5
C
T
iss
C
= -55_C
25_C
12
Si1553DL
2.0
N−CHANNEL
P−CHANNEL
www.vishay.com
16
2.5
125_C
10
3.0
20
2-5