SI1902DL-T1-E3 Vishay, SI1902DL-T1-E3 Datasheet - Page 4

MOSFET N-CH DUAL 20V SC70-6

SI1902DL-T1-E3

Manufacturer Part Number
SI1902DL-T1-E3
Description
MOSFET N-CH DUAL 20V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Datasheets

Specifications of SI1902DL-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
385 mOhm @ 660ma, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
660mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.2nC @ 4.5V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.385 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.66 A
Power Dissipation
270 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
660mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.385Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-70
Module Configuration
Dual
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1902DL-T1-E3TR

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Si1902DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71080.
www.vishay.com
4
- 0.1
- 0.2
- 0.3
- 0.4
0.2
0.1
0.01
0.01
0
0.1
0.1
- 50
2
1
2
1
10
10
0.05
-4
-4
0.02
0.2
0.1
0.02
0.05
0.1
Duty Cycle = 0.5
0.2
- 25
Duty Cycle = 0.5
Single Pulse
0
Single Pulse
Threshold Voltage
T
J
10
25
- Temperature (°C)
-3
50
10
-3
I
Normalized Thermal Transient Impedance, Junction-to-Ambient
D
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
-2
125
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
150
-2
10
-1
10
1
4
5
3
2
0
-1
1
10
-3
Single Pulse Power, Junction-to-Ambient
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3 . T
4. Surface Mounted
P
DM
10
JM
-1
- T
t
Time (s)
1
1
A
= P
t
2
S09-2683-Rev. I, 14-Dec-09
DM
1
Document Number: 71080
Z
thJA
th JA
100
t
t
1
2
(t)
= 400 °C/W
10
100
600
10
600

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