FDC3601N Fairchild Semiconductor, FDC3601N Datasheet - Page 3

• Manufacturer Part Number: FDC3601N
• Description: MOSFET N-CH DUAL 100V SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC3601N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 153pF @ 50V
• Power - Max: 700W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Threshold Voltage Vgs Typ: 2.6V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Device #1 FAN2558SX
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
SOPL1
THBT
TMCL1
Device #2 FDC365P
Package:
#Leads:
Precondition Description:
P/C
X
X
X
TTG23
006
TTK23
C06
P/C
Standard
JESD22-A102 100%RH, 121C 96
JESD22-A108 NA%RH, 150C
JESD22-A101 85%RH, 85C, 5V 168
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Qualification Stress Test and Sample Size Detail
Conditions
Conditions
Readpoints
TP1
168
100
TP2
500
500
500
TP3
1000
1000
Read-
points
Read-
points
Samples
A
77
77
77
77
Sample
Sample
A
0
Pg. 3