SI1563EDH-T1-E3 Vishay, SI1563EDH-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI1563EDH-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1563EDH-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.13A, 880mA
• Vgs(th) (max) @ Id: 450mV @ 100µA
• Gate Charge (qg) @ Vgs: 1nC @ 4.5V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.28 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.13 A @ N Channel or 0.88 A @ P Channel
• Power Dissipation: 570 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.13A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1563EDH-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71416
S10-1054-Rev. D, 03-May-10
- 0.05
- 0.10
- 0.15
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.1
2
1
5
4
3
2
1
0
- 50
0.0
0
Source-Drain Diode Forward Voltage
- 25
V
I
D
0.2
DS
0.2
= 1 A
= 10 V
V
SD
0
0.4
Q
-
Threshold Voltage
g
0.4
T
S
- Total Gate Charge (nC)
J
o
u
25
- Temperature (°C)
Gate Charge
c r
0.6
T
e
J
t -
- o
= 150 °C
0.6
50
D
a r
0.8
n i
I
D
V
75
o
= 100 µA
0.8
a t l
1.0
g
T
e
100
J
(
= 25 °C
) V
1.0
1.2
125
1.2
150
1.4
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
0.0
0.01
5
4
3
2
1
0
- 50
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
- 25
V
I
D
GS
= 0.88 A
0.1
= 4.5 V
1
V
GS
0
T
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
2
1
Time (s)
50
I
D
Vishay Siliconix
= 0.88 A
3
Si1563EDH
10
75
100
www.vishay.com
4
100
125
150
6
5
0
0
7