SSD2007ASTF Fairchild Semiconductor, SSD2007ASTF Datasheet
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SSD2007ASTF
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SSD2007ASTF Summary of contents
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Dual N-CHANNEL POWER MOSFET FEATURES Extremely Lower R DS(ON) Improved Inductive Ruggedness Fast Switching Times Rugged Polysilicon Gate Cell Structure Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability Surface Mounding Package : 8SOP Absolute Maximum Ratings Symbol ...
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SSD2007A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS V Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS I On-State Drain-Source Current(2) DON Static Drain-Source R DS(on) On-State ...
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Dual N-CHANNEL POWER MOSFET Fig 1. Output Characteristics s Drain-Source Voltage [V] DS Fig 3. On-Resistance vs. Drain Current ...
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SSD2007A Fig 7. Nomalized Effective Transient Thermal Impedance, Junction-to-Amdient 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 0. Fig 8. Source-Drain Diode Forward Voltage ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...