SSD2007ASTF Fairchild Semiconductor, SSD2007ASTF Datasheet

MOSFET DUAL N-CHAN 50V 8-SOIC

SSD2007ASTF

Manufacturer Part Number
SSD2007ASTF
Description
MOSFET DUAL N-CHAN 50V 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet
1.SSD2007ASTF.pdf (5 pages)

Specifications of SSD2007ASTF

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohms
Forward Transconductance Gfs (max / Min)
2.5 S
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
SSD2007ASTF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Dual N-CHANNEL POWER MOSFET
FEATURES
Absolute Maximum Ratings
Notes ;
(1) T
(2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature
T
Symbol
Surface Mounding Package : 8SOP
Extremely Lower R
Improved Inductive Ruggedness
Fast Switching Times
Rugged Polysilicon Gate Cell Structure
Low Input Capacitance
Extended Safe Operating Area
Improved High Temperature Reliability
J
V
V
V
I
P
, T
T
I
I
DM
DSS
DGR
J
GS
D
D
= 25
D
L
STG
℃ to 150℃
Drain-to-Source Voltage(1)
Drain-Gate Voltage(R
Gate-to-Source Voltage
Continuous Drain Current T
Continuous Drain Current T
Drain Current-Pulsed (2)
Total Power Dissipation T
Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/16” from case for 5 seconds
DS(ON)
Characteristic
GS
=1.0MΩ)(1)
T
A
A
=25℃
=70℃
A
A
=25℃
=100℃
8 SOP
G
1
,G
- 55 to +150
2
S
G
S
G
N-Channel MOSFET
1
2
1
2
Value
300
±20
SSD2007A
2.0
1.6
8.0
2.0
1.3
50
50
▼
▼
1
2
3
4
D
Top View
1
,D
2
S
1
,S
2
D
▼
8
7
6
5
1
,D
2
D
D
D
D
Units
1
1
2
2
℃
V
V
V
W
A
A
V
Rev. B

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SSD2007ASTF Summary of contents

Page 1

Dual N-CHANNEL POWER MOSFET FEATURES Extremely Lower R DS(ON) Improved Inductive Ruggedness Fast Switching Times Rugged Polysilicon Gate Cell Structure Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability Surface Mounding Package : 8SOP Absolute Maximum Ratings Symbol ...

Page 2

SSD2007A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS V Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS I On-State Drain-Source Current(2) DON Static Drain-Source R DS(on) On-State ...

Page 3

Dual N-CHANNEL POWER MOSFET Fig 1. Output Characteristics s Drain-Source Voltage [V] DS Fig 3. On-Resistance vs. Drain Current ...

Page 4

SSD2007A Fig 7. Nomalized Effective Transient Thermal Impedance, Junction-to-Amdient 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 0. Fig 8. Source-Drain Diode Forward Voltage ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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