FDMA6023PZT Fairchild Semiconductor, FDMA6023PZT Datasheet - Page 4

• Manufacturer Part Number: FDMA6023PZT
• Description: MOSFET P-CH DUAL 20V 6MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA6023PZT

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 885pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-UMLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: -3.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA6023PZTTR

©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
15
12
15
12
-75
0.0
0.0
Figure 3. Normalized On- Resistance
9
6
3
0
9
6
3
0
Figure 1.
Figure 5. Transfer Characteristics
V
V
V
PULSE DURATION = 300
DUTY CYCLE = 2.0% MAX
GS
GS
GS
V
-50
I
D
GS
= -2.5V
= -4.5V
= -3.0V
= -3.6A
vs Junction Temperature
= -4.5V
V
T
DS
0.5
J
-25
-V
-V
T
= 25
= -5V
0.5
J
GS
DS
On-Region Characteristics
,
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
T
,
o
J
C
DRAIN TO SOURCE VOLTAGE (V)
= 125
0
1.0
o
25
C
1.0
µ
PULSE DURATION = 300
DUTY CYCLE = 2.0% MAX
s
T
50
J
1.5
T
= -55
J
= 25 °C unless otherwise noted
75
V
V
V
o
GS
GS
GS
C
= -1.8V
= -2.0V
= -1.5V
1.5
100 125 150
o
2.0
C )
µ
s
2.5
2.0
4
0.001
0.01
200
160
120
3.0
2.5
2.0
1.5
1.0
0.5
0.1
80
40
10
Figure 2.
Figure 4.
0
1
1.0
Forward Voltage vs Source Current
0.0
0
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
GS
T
1.5
-V
= -1.5V
J
= 0V
V
0.2
SD
= 125
GS
V
-V
Normalized On-Resistance
3
GS
On-Resistance vs Gate to
, BODY DIODE FORWARD VOLTAGE (V)
GS
I
= -1.8V
T
D
Source Voltage
-I
Source to Drain Diode
= -2.5V
J
,
D
= -3.6A
o
2.0
= 25
C
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT(A)
0.4
T
o
J
C
= 125
V
6
2.5
GS
V
= -2.0V
PULSE DURATION = 300
DUTY CYCLE = 2.0% MAX
o
T
PULSE DURATION = 300
DUTY CYCLE = 2.0% MAX
GS
C
0.6
J
T
= -55
= -3.0V
J
3.0
= 25
9
o
C
o
0.8
C
3.5
V
GS
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12
= -4.5V
1.0
4.0
µ
µ
s
s
15
4.5
1.2