FDC6318P Fairchild Semiconductor, FDC6318P Datasheet - Page 4

• Manufacturer Part Number: FDC6318P
• Description: MOSFET P-CH DUAL 12V SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6318P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 455pF @ 6V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: 700mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
1
5
4
3
2
1
0
0.1
Figure 7. Gate Charge Characteristics.
0
0.001
0.01
R
SINGLE PULSE
0.1
R
I
D
0.00001
DS(ON)
θJA
V
1
= -2.5A
T
GS
A
= 130
= 25
= -4.5V
LIMIT
D = 0.5
o
o
C/W
C
0.2
-V
0.1
0.05
2
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
1
0.0001
g
, GATE CHARGE (nC)
SINGLE PULSE
DC
1s
100ms
V
4
DS
Figure 11. Transient Thermal Response Curve.
10ms
= -4V
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1ms
0.001
-8V
10
100 µ s
-6V
6
0.01
100
8
t
1
, TIME (sec)
0.1
800
600
400
200
0
20
15
10
5
0
0.001
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.01
C
RSS
-V
Power Dissipation.
3
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
OSS
0.1
C
10
t
1
ISS
, TIME (sec)
P(pk)
Duty Cycle, D = t
6
1
T
R
J
R
θJA
- T
θJA
(t) = r(t) * R
A
= 130
t
= P * R
1
10
t
100
2
o
C/W
9
SINGLE PULSE
R
θJA
θJA
θJA
1
T
FDC6318P Rev D (W)
(t)
/ t
f = 1 MHz
V
100
A
= 130°C/W
GS
= 25°C
2
= 0 V
1000
1000
12