SI3552DV-T1-E3 Vishay, SI3552DV-T1-E3 Datasheet - Page 4
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SI3552DV-T1-E3
Manufacturer Part Number
SI3552DV-T1-E3
Description
MOSFET N/P-CH 30V 2.5/1.8A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets
1.SI3552DV-T1-E3.pdf
(8 pages)
2.SI3552DV-T1-E3.pdf
(5 pages)
3.SI3552DV-T1-E3.pdf
(8 pages)
Specifications of SI3552DV-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A, 1.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 5V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.105 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A @ N Channel or 1.8 A @ P Channel
Power Dissipation
1150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
51A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
360mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3552DV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3552DV-T1-E3
Manufacturer:
VIS
Quantity:
20 000
www.vishay.com
4
Si3552DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.1
0.01
10
0.1
1
- 50
0.00
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
T
Threshold Voltage
I
= 150_C
D
J
0.4
10
= 250 mA
- Temperature (_C)
25
-3
Single Pulse
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10
100
-2
T
J
= 25_C
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
-1
1
0.40
0.32
0.24
0.16
0.08
0.00
8
6
4
2
0
0.01
0
Single Pulse Power (Junction-to-Ambient)
On-Resistance vs. Gate-to-Source Voltage
I
D
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
= 2 A
V
Notes:
2
P
GS
DM
JM
0.1
- Gate-to-Source Voltage (V)
- T
A
t
1
= P
Time (sec)
t
4
2
DM
I
D
Z
= 2.5 A
thJA
thJA
100
t
t
(t)
1
2
S-31725—Rev. B, 18-Aug-03
= 130_C/W
1
Document Number: 70971
6
NCHANNEL
600
8
10
10
30