SIA511DJ-T1-GE3 Vishay, SIA511DJ-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SIA511DJ-T1-GE3
• Description: MOSFET N/P-CH 12V PWRPAK SC70-6
• Manufacturer: Vishay

Specifications of SIA511DJ-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.5A, 4.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 8V
• Input Capacitance (ciss) @ Vds: 400pF @ 6V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6 Dual
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.04 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 13 S, 9 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A @ N Channel or 4.3 A @ P Channel
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 33mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA511DJ-T1-GE3TR

SiA511DJ
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
DS
oss
iss
rss
gd
fs
gs
g
g
/T
/T
J
J
V
New Product
V
V
DS
V
V
V
DS
DS
V
V
DS
DS
DS
DS
DS
= - 6 V, V
= - 6 V, V
= - 12 V, V
V
V
V
V
V
V
= 12 V, V
V
= 6 V, V
V
= - 6 V, V
V
V
V
V
V
V
V
DS
GS
GS
GS
= 6 V, V
= 6 V, V
DS
V
V
DS
GS
DS
DS
GS
DS
DS
GS
GS
GS
DS
DS
≤ - 5 V, V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= V
= - 10 V, I
= 0 V, I
= V
= - 12 V, V
= 0 V, V
= 0 V, I
≥ 5 V, V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
I
I
= 12 V, V
= 10 V, I
D
D
I
I
N-Channel
N-Channel
D
D
P-Channel
P-Channel
GS
f = 1 MHz
GS
GS
Test Conditions
= - 250 µA
= - 250 µA
GS
GS
GS
= 250 µA
= 250 µA
GS
GS
GS
GS
, I
= - 4.5 V, I
, I
= 4.5 V, I
= - 8 V, I
D
= 0 V, f = 1 MHz
= 8 V, I
D
= 0 V, T
D
= 0 V, f = 1 MHz
D
= 0 V, T
GS
GS
GS
= - 250 µA
= - 250 µA
D
D
= 250 µA
D
D
D
D
D
D
= 250 µA
GS
GS
= 4.2 A
= - 3.3 A
= 4.2 A
= - 3.3 A
= 3.8 A
= - 2.8 A
= 1.6 A
= - 0.7 A
= 4.5 V
= - 4.5 V
= ± 8 V
= 0 V
= 0 V
D
D
J
D
J
D
= 5.5 A
= 55 °C
= - 4.3 A
= 5.5 A
= 55 °C
= - 4.3 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 0.4
- 12
0.4
- 8
12
15
S-80436-Rev. B, 03-Mar-08
Document Number: 74592
0.033
0.058
0.039
0.082
0.051
0.111
Typ.
- 2.8
400
400
120
140
100
2.1
7.5
4.5
0.6
0.8
0.8
1.4
2.5
12
- 7
13
70
9
8
5
7
± 100
± 100
0.040
0.070
0.048
0.100
0.063
0.140
Max.
- 10
6.8
7.5
- 1
- 1
10
12
12
1
1
mV/°C
Unit
nC
nA
µA
pF
V
V
A
Ω
S
Ω