FDZ1905PZ Fairchild Semiconductor, FDZ1905PZ Datasheet - Page 4

• Manufacturer Part Number: FDZ1905PZ
• Description: MOSFET P-CH 20V 3A 6-WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ1905PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 126 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: FDZ1905PZTR

FDZ1905PZ Rev.C
Typical Characteristics
0.01
0.1
10
20
15
12
1
9
6
3
0
0.1
0.01
0.0
0.1
Figure 7. Transfer Characteristics
THIS AREA IS
LIMITED BY r
2
1
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
SINGLE PULSE
T
R
T
10
J
A
θ
Figure 9.
JA
= MAX RATED
-3
= 25
-V
V
= 140
S1S2
S1S2
o
0.5
-V
C
, SOURCE1 TO SOURCE2 VOLTAGE (V)
= -5V
GS
o
C/W
Operating Area
, GATE TO SOURCE VOLTAGE (V)
S1S2(on)
T
DUTY CYCLE-DESCENDING ORDER
D = 0.5
J
Forward Bias Safe
= 150
1
0.2
0.1
0.05
0.02
0.01
1.0
o
C
10
µ
s
-2
T
T
Figure 11. Transient Thermal Response Curve
J
1.5
J
SINGLE PULSE
R
= -55
θ
= 25°C unless otherwise noted
JA
T
J
= 140
o
10
C
= 25
o
o
2.0
C/W
C
10
100ms
100us
10ms
1s
10s
DC
1ms
t, RECTANGULAR PULSE DURATION (s)
-1
60
2.5
4
10
0
10
10
10
10
10
10
10
10
10
10
10
-1
10
-3
-4
-5
-6
-7
-8
-9
2
1
0
0
-4
Figure 8.
Figure 10.
V
S1S2
10
= 0V
-3
10
-V
3
Power Dissipation
1
GS ,
NOTES:
DUTY FACTOR: D = t
PEAK T
T
Gate Leakage vs Gate to
10
t, PULSE WIDTH (sec)
Source Voltage
J
Single Pulse Maximum
= 150
GATE TO SOURCE VOLTAGE(V)
-2
J
o
= P
10
C
6
-1
DM
x Z
T
J
10
P
θJA
= 25
DM
10
0
1
9
/t
x R
2
2
o
C
SINGLE PULSE
R
T
θJA
V
A
θ
10
JA
t
GS
= 25
1
+ T
1
= 140
t
= -4.5V
2
A
o
12
C
100
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o
C/W
1000
10
15
3