FDS3601 Fairchild Semiconductor, FDS3601 Datasheet - Page 4

• Manufacturer Part Number: FDS3601
• Description: MOSFET N-CH DUAL 100V 1.3A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS3601

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 480 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 153pF @ 50V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.001
10
0.01
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
0.1
10
0
Figure 7. Gate Charge Characteristics.
1
0.1
0.001
0.01
I
R
0.1
D
DS(ON)
SINGLE PULSE
0.0001
R
= 1.3A
1
JA
V
T
GS
A
= 135
LIMIT
= 25
= 10V
D = 0.5
o
o
0.2
1
C/W
C
0.1
V
0.05
1
DS
0.02
, DRAIN-SOURCE VOLTAGE (V)
0.01
Q
g
, GATE CHARGE (nC)
SINGLE PULSE
0.001
DC
2
10
10s
Figure 11. Transient Thermal Response Curve.
1s
100ms
V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10ms
DS
= 30V
1ms
100
0.01
3
100µs
70V
50V
1000
4
0.1
200
150
100
50
40
30
20
10
50
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
RSS
1
C
0.01
OSS
10
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
ISS
20
t
10
1
, TIME (sec)
1
30
P(pk)
10
Duty Cycle, D = t
T
R
R
J
JA
100
- T
JA
SINGLE PULSE
(t) = r(t) + R
R
A
= 135 °C/W
t
JA
T
1
= P * R
A
t
40
100
2
=135°C/W
= 25°C
FDS3601 Rev C(W)
V
f = 1MHz
GS
= 0 V
JA
1
JA
(t)
/ t
1000
2
50
1000