FDS4935BZ Fairchild Semiconductor, FDS4935BZ Datasheet - Page 2

• Manufacturer Part Number: FDS4935BZ
• Description: IC MOSFET P-CH DUAL 30V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS4935BZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1360pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.022Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±25V
• Drain Current (max): 6.9A
• Power Dissipation: 1.6W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 6.9 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: -6.9A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 22mohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4935BZTR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
r
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
the drain pins. R
DSS
GSS
d(on)
r
d(off)
f
S
RR
DS(on)
FS
BV
V
GS(th)
SD
iss
oss
rss
g(TOT)
g(TOT)
gs
gd
RR
JA
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge, V
Total Gate Charge, V
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Charge
JC
is guaranteed by design while R
a) 78°C/W steady state
when mounted on a
1in
copper
2
Parameter
pad of 2 oz
(Note 2)
GS
GS
(Note 2)
= 10V
= 5V
CA
is determined by the user's board design.
T
V
I
V
V
V
I
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
I
d
A
D
D
F
iF
= 25°C unless otherwise noted
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –8.8 A,
= –250 A,Referenced to 25 C
= –250 A,Referenced to 25 C
/d
b) 125°C/W when
= –10 V, I
= 0 V,
= –24 V, V
= +25 V, V
= V
= –10 V, I
= –4.5 V, I
= –5 V,
= –15 V, V
= –15 V, I
= –10 V, R
= –15 V, I
= –10 V
= 0 V,
t
mounted on a .04 in
pad of 2 oz copper
= 100 A/µs
Test Conditions
GS
, I
D
I
= –250 A
S
D
I
I
D
D
D
D
D
= –6.9A,T
= –2.1 A
D
GS
DS
= –6.9 A
GS
GEN
= –250 A
= –6.9 A
= –5.3 A
= –6.9 A,
= –1 A,
= 0 V
= 0 V
= 0 V,
= 6
2
J
=125 C
(Note 2)
(Note 2)
Min
–30
–1
c) 135°C/W when mounted on a
Typ Max Units
1360
–1.9
27.5
–0.8
240
200
minimum pad.
24
–5
18
26
22
12
13
68
38
29
16
24
4
7
9
–2.1
–1.2
+10
108
–1
–3
22
35
34
22
23
61
40
23
FDS4935BZ Rev B1 (W)
mV/ C
mV/ C
m
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
V
A
A