SI1553DL-T1 Vishay, SI1553DL-T1 Datasheet - Page 6

• Manufacturer Part Number: SI1553DL-T1
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1553DL-T1

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 385 mOhm @ 660ma, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 660mA, 410mA
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 660mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 995mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.vishay.com
2-6
Si1553DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.1
-0.2
0.4
0.3
0.2
0.1
0.0
0.1
5
4
3
2
1
0
1
-50
0.0
0.0
V
I
D
-25
Source-Drain Diode Forward Voltage
DS
0.2
= 0.41 A
0.2
= 10 V
V
SD
0
Q
0.4
g
T
Threshold Voltage
- Source-to-Drain Voltage (V)
0.4
J
- Total Gate Charge (nC)
T
J
- Temperature (_C)
25
= 150_C
Gate Charge
0.6
0.6
50
I
D
0.8
= 250 mA
75
0.8
1.0
100
T
J
1.0
= 25_C
1.2
125
150
1.4
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
10
-50
0
- 3
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
-25
D
GS
10
= 0.41 A
- 2
= 4.5 V
1
T
V
0
J
GS
10
- Junction Temperature (_C)
- 1
Single Pulse Power
- Gate-to-Source Voltage (V)
25
Time (sec)
2
50
1
S-21374—Rev. D, 12-Aug-02
Document Number: 71078
I
3
D
75
10
= 0.41 A
P−CHANNEL
100
4
100
125
600
150
5