SI4947ADY-T1-E3 Vishay, SI4947ADY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4947ADY-T1-E3
• Description: MOSFET P-CH DUAL 30V 3.0A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4947ADY-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -3A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 62mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Power Dissipation Pd: 1.2W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4947ADY-T1-E3TR

Si4947ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71101.
www.vishay.com
4
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
0.05
0.02
0.02
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
0.1
0.2
0.1
Single Pulse
0
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
Single Pulse
50
10
I
D
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Foot
0.05
100
10
-2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
30
24
18
12
10
1
6
0
10
-1
-2
Single Pulse Power, Junction-to-Ambient
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
1
S09-0870-Rev. D, 18-May-09
A
1
= P
1
t
2
Document Number: 71101
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 87 °C/W
10
600
10
100