FDS9958 Fairchild Semiconductor, FDS9958 Datasheet

MOSFET P-CH 60V DUAL SO-8

FDS9958

Manufacturer Part Number
FDS9958
Description
MOSFET P-CH 60V DUAL SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS9958

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
1020pF @ 30V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.105 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.9 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS9958TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS9958
Manufacturer:
FSC
Quantity:
15 000
Part Number:
FDS9958
Manufacturer:
Fairchild Semiconductor
Quantity:
33 440
Part Number:
FDS9958
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
FDS9958
0
Company:
Part Number:
FDS9958
Quantity:
36 686
Company:
Part Number:
FDS9958
Quantity:
60
Part Number:
FDS9958-NL
Manufacturer:
FAIRCHILD
Quantity:
12 652
Part Number:
FDS9958-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Final PCN Q3073705 is an addendum for Final PCN Q1070805.
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: Kalabkova, Ivana
E-mail: Ivana.Kalabkova@notes.fairchildsemi.com
Phone: 408-822-2187
Implementation of change:
Expected 1st Device Shipment Date: 2007/12/10
Earliest Year/Work Week of Changed Product: 0750
Change Type Description: Bond Wire Material Composition
Description of Change (From): Wirebond material using 2mil Gold (Au) wire for SO8 devices
manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.
Description of Change (To): Wirebond material using 2mil Copper (Cu) wire for SO8 devices
manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.
Reason for Change : Qualification of GEM as alternate site for Cu wire bonded parts for SO-8.
Products will be shipped for an interim period of time with Au wire until the inventory is
depleted and then converted to Cu wire. GEM Electronics Ltd., Shanghai China is TS-16949
certified.
Qual/REL Plan Numbers : Q20070231
Qualification :
This change will have no impact on any of the electrical parameters of the products
involved. The product test conditions, test limits and performance will remain
unchanged. Products will be built with the same level of quality and reliability as with
the existing products. The devices for qualification and qualification requirements are
defined in the table below.
Results/Discussion
Test: (Autoclave)
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: Rivero, Douglas
E-mail: Doug.Rivero@fairchildsemi.com
Phone: 1-408-822-2143
Date Issued On : 2007/10/12
Date Created : 2007/09/11
PCN# : Q3073705
Pg. 1

Related parts for FDS9958

FDS9958 Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

Lot Device Q20070231AAACLV FDS6912A Q20070231BAACLV FDS3570 Q20070231CAACLV FDS3672 Q20070231DAACLV FDS8870 Test: (High Temperature Gate Bias) Lot Device Q20070231AAHTGB FDS6912A Q20070231BAHTGB FDS3570 Q20070231CAHTGB FDS3672 Q20070231DAHTGB FDS8870 Test: (High Temperature Reverse Bias) Lot Device Q20070231AAHTRB FDS6912A Q20070231BAHTRB FDS3570 Q20070231CAHTRB FDS3672 Q20070231DAHTRB FDS8870 ...

Page 3

... FDS6609A_NL FDS6680A_F095 FDS6682_NL FDS6694_NF40 FDS6875_NF40 FDS6890A_NL FDS6892A_NL FDS6898AZ_NF40 FDS6898A_NF40 FDS6910_NL FDS6912_NL FDS6961A_NF011 FDS6982AS FDS6990A_NL FDS8813NZ FDS8958A_NF40 FDS9400A FDS9435A_NF40 FDS9926A_NL FDS9934C_NL FDS9958 NDS9407_F095 SI9933BDY FDS2582 FDS3512_NL FDS3601_NL FDS3682 FDS3890_NL FDS4410A_NL FDS4435_F095 FDS4470_NL FDS4501H_F065 FDS4885C_NL FDS4953_NL FDS5672 FDS5682 FDS6294_NL FDS6570A_NF40 FDS6575_NL FDS6670A_NF40 FDS6680A_NF40 ...

Related keywords