FDC6020C_F077 Fairchild Semiconductor, FDC6020C_F077 Datasheet
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FDC6020C_F077
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FDC6020C_F077 Summary of contents
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... STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device .020 FDC6020C 2003 Fairchild Semiconductor Corporation MOSFET Features • Q1 –4.2 A, –20V. R • Q2 5.9 A, 20V. superior • Low gate charge • High performance trench technology for extremely low R ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown DSS Voltage ∆BV Breakdown Voltage DSS Temperature Coefficient ∆ Zero Gate Voltage Drain DSS Current I Gate-Body Leakage GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...
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Electrical Characteristics Symbol Parameter Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current S V Drain-Source Diode Forward SD Voltage t Diode Reverse Recovery rr Time Q Diode Reverse Recovery rr Charge Notes ...
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Typical Characteristics : -4.5V GS -3.0V -3. DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -4. -4.5V GS ...
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Typical Characteristics : -4. - GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 ...
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Typical Characteristics : 4.5V 3.0V GS 2. DRAIN-SOURCE VOLTAGE (V) DS Figure 11. On-Region Characteristics 4.5V GS 1.4 ...
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Typical Characteristics : 5. GATE CHARGE (nC) g Figure 17. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 ...
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Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern For Standard Dual Configuration FDC6020C RevB (W) ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...