FDS6912 Fairchild Semiconductor, FDS6912 Datasheet
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FDS6912
Specifications of FDS6912
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FDS6912 Summary of contents
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... Low gate charge =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ July 2000 R = 0.028 @ DS(ON 0.042 @ V = 4.5 V. DS(ON Ratings Units 1.6 1 0.9 -55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS6912 Rev F (W) ...
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... CA b) 125°/W when mounted pad copper Min Typ Max Units mV 100 nA –100 –5 mV/ C 0.024 0.028 0.034 0.048 0.035 0.042 740 pF 170 3.8 nC 2.5 nC 1.3 A 0.75 1 135°/W when mounted on a minimum mounting pad. FDS6912 Rev E (W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4.0V GS 4.5V 5.0V 6.0V 7.0V 10V DRAIN CURRENT ( 3. 125 ,GATE-SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.4 0.8 1 BODY DIODE FORWARD VOLTAGE (V) SD FDS6912 Rev E ( 1.6 ...
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... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec iss C oss C rss = 0V 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 300 FDS6912 Rev E (W) 30 1000 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...