FDS6912 Fairchild Semiconductor, FDS6912 Datasheet

MOSFET N-CH DUAL PWM OPT 8-SOIC

FDS6912

Manufacturer Part Number
FDS6912
Description
MOSFET N-CH DUAL PWM OPT 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheets

Specifications of FDS6912

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Input Capacitance (ciss) @ Vds
740pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Dc
0452
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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FDS6912
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs have been
designed specifically to improve the overall efficiency of
DC/DC
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
stg
FDS6912
converters
D2
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D2
using
D1
D1
either
S2
– Continuous
– Pulsed
FDS6912
Device
G2
Parameter
synchronous
S1
G1
T
A
=25
or
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
6 A, 30 V.
Optimized for use in switching DC/DC converters
Very fast switching.
Low gate charge
with PWM controllers
5
6
7
8
Tape width
12mm
-55 to +150
Q1
Q2
R
R
Ratings
DS(ON)
DS(ON)
1.6
0.9
30
20
78
40
25
6
2
1
= 0.028
= 0.042
4
3
2
1
@ V
@ V
July 2000
GS
GS
2500 units
FDS6912 Rev F (W)
Quantity
= 10 V
= 4.5 V.
Units
C/W
C/W
W
V
V
A
C

Related parts for FDS6912

FDS6912 Summary of contents

Page 1

... Low gate charge =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ July 2000 R = 0.028 @ DS(ON 0.042 @ V = 4.5 V. DS(ON Ratings Units 1.6 1 0.9 -55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS6912 Rev F (W) ...

Page 2

... CA b) 125°/W when mounted pad copper Min Typ Max Units mV 100 nA –100 –5 mV/ C 0.024 0.028 0.034 0.048 0.035 0.042 740 pF 170 3.8 nC 2.5 nC 1.3 A 0.75 1 135°/W when mounted on a minimum mounting pad. FDS6912 Rev E (W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4.0V GS 4.5V 5.0V 6.0V 7.0V 10V DRAIN CURRENT ( 3. 125 ,GATE-SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.4 0.8 1 BODY DIODE FORWARD VOLTAGE (V) SD FDS6912 Rev E ( 1.6 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec iss C oss C rss = 0V 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 300 FDS6912 Rev E (W) 30 1000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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