SI3948DV-T1-E3 Vishay, SI3948DV-T1-E3 Datasheet
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SI3948DV-T1-E3
Specifications of SI3948DV-T1-E3
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SI3948DV-T1-E3 Summary of contents
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... Top View 2.85 mm Ordering Information: Si3948DV-T1-E3 (Lead (Pb)-free) Si3948DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction Maximum Power Dissipation ...
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... Si3948DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... I - Drain Current (A) D On-Resistance vs. Drain Current 1 Total Gate Charge (nC) g Gate Charge Document Number: 70969 S09-1816-Rev. B, 14-Sep- Si3948DV Vishay Siliconix ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 300 250 C iss 200 150 100 C oss 50 C rss Drain-to-Source Voltage (V) DS Capacitance 1.8 1 ...
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... Si3948DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0 ...
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... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70969. Document Number: 70969 S09-1816-Rev. B, 14-Sep- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3948DV Vishay Siliconix - www.vishay.com 10 5 ...
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