SI3948DV-T1-E3 Vishay, SI3948DV-T1-E3 Datasheet

MOSFET N-CH DUAL 30V 2.5A 6-TSOP

SI3948DV-T1-E3

Manufacturer Part Number
SI3948DV-T1-E3
Description
MOSFET N-CH DUAL 30V 2.5A 6-TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI3948DV-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 5V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.105 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A
Power Dissipation
1150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
175mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
20V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3948DV-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3948DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI3948DV-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
Document Number: 70969
S09-1816-Rev. B, 14-Sep-09
Ordering Information:
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
V
DS
30
(V)
3 mm
G1
G2
S2
0.175 at V
0.105 at V
Si3948DV-T1-E3 (Lead (Pb)-free)
Si3948DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
Top View
1
2
3
DS(on)
TSOP-6
2.85 mm
J
a, b
= 150 °C)
a
Dual N-Channel 30-V (D-S) MOSFET
GS
GS
(Ω)
= 4.5 V
= 10 V
6
5
4
a, b
D1
S1
D2
a, b
A
I
± 2.5
± 2.0
= 25 °C, unless otherwise noted
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
J
Definition
V
V
I
P
, T
I
DM
thJA
I
thJL
DS
GS
D
S
D
stg
G
1
N-Channel MOSFET
®
Power MOSFETs
Typical
D
S
1
1
130
93
75
- 55 to 150
Limit
± 2.5
± 2.0
± 20
1.05
1.15
0.73
± 8
30
Maximum
G
110
150
90
2
Vishay Siliconix
N-Channel MOSFET
Si3948DV
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI3948DV-T1-E3

SI3948DV-T1-E3 Summary of contents

Page 1

... Top View 2.85 mm Ordering Information: Si3948DV-T1-E3 (Lead (Pb)-free) Si3948DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction Maximum Power Dissipation ...

Page 2

... Si3948DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... I - Drain Current (A) D On-Resistance vs. Drain Current 1 Total Gate Charge (nC) g Gate Charge Document Number: 70969 S09-1816-Rev. B, 14-Sep- Si3948DV Vishay Siliconix ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 300 250 C iss 200 150 100 C oss 50 C rss Drain-to-Source Voltage (V) DS Capacitance 1.8 1 ...

Page 4

... Si3948DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70969. Document Number: 70969 S09-1816-Rev. B, 14-Sep- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3948DV Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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