FDS6898AZ Fairchild Semiconductor, FDS6898AZ Datasheet - Page 3

• Manufacturer Part Number: FDS6898AZ
• Description: MOSFET N-CH DUAL 20V 9.4A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6898AZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1821pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 47 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 9.4 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 9.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6898AZ

Typical Characteristics
40
30
20
10
40
30
20
10
1.6
1.4
1.2
0.8
0.6
0
0
Figure 3. On-Resistance Variation with
0.5
1
0
Figure 1. On-Region Characteristics.
-50
V
Figure 5. Transfer Characteristics.
GS
V
V
DS
= 4.5V
I
GS
D
= 5V
= 9.4A
-25
= 4.5V
V
0.5
V
1
GS
T
DS
0
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
2.5V
, DRAIN-SOURCE VOLTAGE (V)
Temperature.
3.0V
25
1.5
1
50
2.0V
75
T
A
= -55
1.5
100
o
2
C)
o
C
125
125
25
o
C
o
C
150
2.5
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.038
0.022
0.014
0.006
0.001
0.03
0.01
100
0.1
2.2
1.8
1.6
1.4
1.2
0.8
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
2
1
1
0
0
V
Drain Current and Gate Voltage.
V
GS
GS
= 0V
= 2.0V
Gate-to-Source Voltage.
0.2
V
T
SD
A
= 25
V
, BODY DIODE FORWARD VOLTAGE (V)
2
10
GS
T
, GATE TO SOURCE VOLTAGE (V)
A
o
2.5V
C
= 125
0.4
I
D
, DRAIN CURRENT (A)
o
C
T
A
3.0V
= 125
25
0.6
20
3
o
C
o
C
-55
4.0V
0.8
o
C
30
4
FDS6898AZ Rev C (W)
I
D
1
= 4.7A
4.5V
1.2
40
5