FDS3912 Fairchild Semiconductor, FDS3912 Datasheet - Page 3

• Manufacturer Part Number: FDS3912
• Description: MOSFET N-CH DUAL 100V 3A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS3912

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 632pF @ 50V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
the drain pins. R
S
rr
SD
rr
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
a)
78°C/W when
mounted on a
0.5in
oz copper
2
pad of 2
CA
is determined by the user's board design.
V
I
d
F
iF
GS
= 3A
/d
= 0 V,
t
= 100 A/µs
b)
I
S
125°C/W when
mounted on a
0.02 in
2 oz copper
= 1.3 A
2
pad of
(Note 2)
(Note 2)
0.76
106
c)
30
135°C/W when
mounted on a
minimum pad.
1.3
1.2
FDS3912 Rev C2(W)
nC
nS
A
V