FDS6894A Fairchild Semiconductor, FDS6894A Datasheet
FDS6894A
Manufacturer Part Number
FDS6894A
Description
MOSFET N-CH DUAL 20V 8A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6894A.pdf
(5 pages)
Specifications of FDS6894A
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 4.5V
Input Capacitance (ciss) @ Vds
1676pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.017 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
44 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
8 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS6894A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6894A-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Company:
Part Number:
FDS6894AZ
Manufacturer:
FSC
Quantity:
181
Company:
Part Number:
FDS6894AZ-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6894AZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS6894A
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
FDS6894A
Fairchild
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
D2
Semiconductor’s
D
D2
SO-8
D
– Continuous
– Pulsed
D1
FDS6894A
D
Device
D1
Parameter
S2
S
G2
S
advanced
S1
S
G1
T
G
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
8 A, 20 V.
Low gate charge (17 nC)
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
Q1
Q2
–55 to +150
12mm
Ratings
R
R
R
DS(ON)
DS(ON)
DS(ON)
1.6
0.9
20
32
78
40
8
2
1
8
= 17 m @ V
= 20 m @ V
= 30 m @ V
October 2001
4
3
2
1
GS
GS
GS
FDS6894A Rev C (W)
2500 units
Quantity
= 4.5 V
= 2.5 V
= 1.8 V
Units
C/W
C/W
W
V
V
A
C
Related parts for FDS6894A
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDS6894A Summary of contents
Page 1
... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ October 2001 4.5 V DS(ON 2.5 V DS(ON 1.8 V DS(ON Ratings Units 1.6 1 0.9 –55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS6894A Rev C (W) ...
Page 2
... S is determined by the user's board design 125°C/W when mounted pad copper Min Typ Max Units mV 100 nA –100 0.6 0.8 1.5 V –3 mV 1676 pF 288 pF 146 2.8 nC 3.3 nC 1.3 A 0.7 1 135°C/W when mounted on a minimum mounting pad. FDS6894A Rev C (W) ...
Page 3
... Gate-to-Source Voltage - 125 C 0.1 0.01 0.001 0.0001 1 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 1.8V 2.0V 2.5V 3.0V 3.5V 4. DIRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6894A Rev C ( ...
Page 4
... Figure 8. Capacitance Characteristics. 50 100 s 1ms 40 10ms 0.01 10 100 Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS6894A Rev C (W) ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...