SI7540DP-T1-GE3 Vishay, SI7540DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7540DP-T1-GE3
• Description: MOSFET N/P-CH 12V PPAK 8-SOIC
• Manufacturer: Vishay

Specifications of SI7540DP-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.6A, 5.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 7.6A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7540DP-T1-GE3TR

Si7540DP
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
20
10
0.4
0.2
0.0
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
T
- Temperature (°C)
25
J
= 150 °C
50
0.6
I
D
= 250 μA
75
0.8
0.01
100
0.1
10
T
100
Limited by R
1
0.1
J
= 25 °C
Safe Operating Area, Junction-to-Ambient
Limited
1.0
I
125
D(on)
Single Pulse
T
A
DS(on)
V
= 25 °C
150
DS
1.2
- Drain-to-Source Voltage (V)
BVDSS Limited
1
I
DM
10
0.05
0.04
0.03
0.02
0.01
0.00
40
32
24
16
Limited
1 ms
10 ms
100 ms
1 s
10 s
DC
8
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
I
D
0.1
100
= 5 A
1
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
2
1
Time (s)
S09-0227-Rev. F, 09-Feb-09
I
D
Document Number: 71911
= 11.8 A
3
10
4
100
600
5