SI6993DQ-T1-E3 Vishay, SI6993DQ-T1-E3 Datasheet - Page 4

MOSFET P-CH DUAL 30V 3.6A 8TSSOP

SI6993DQ-T1-E3

Manufacturer Part Number
SI6993DQ-T1-E3
Description
MOSFET P-CH DUAL 30V 3.6A 8TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI6993DQ-T1-E3

Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
31 mOhm @ 4.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Source
Resistance Drain-source Rds (on)
0.031 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.6 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-4.7A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
31mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI6993DQ-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6993DQ-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
32 885
Part Number:
SI6993DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 871
Si6993DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
I
D
0
= 250 µA
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
1
100
0.1
10
Limited by R
-2
* V
Safe Operating Area, Junction-to-Case
GS
125
> minimum V
Single Pulse
V
T
DS
C
150
= 25 °C
DS (on) *
- Drain-to-Source Voltage (V)
Square Wave Pulse Duration (s)
1
10
-1
GS
at which R
DS(on)
10
100
80
60
40
20
1
0
is specified
0.001
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
100
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
A
1
= P
S-81221-Rev. B, 02-Jun-08
0.1
t
Document Number: 72369
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 124 °C/W
1
600
10

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