SI7540DP-T1-E3 Vishay, SI7540DP-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI7540DP-T1-E3
• Description: MOSFET N/P-CH 12V PWRPAK 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7540DP-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.6A, 5.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.017 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 11.8A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 17mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7540DP-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71911
S09-0227-Rev. F, 09-Feb-09
0.01
0.1
0.01
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Single Pulse
0.02
10
0.05
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
Normalized Thermal Transient Impedance, Junction-to-Case
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
-1
P
DM
JM
- T
t
A
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
100
thJA
t
t
Si7540DP
1
2
(t)
= 60 °C/W
www.vishay.com
600
1
5