IRF9952TRPBF International Rectifier, IRF9952TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF9952TRPBF
• Description: MOSFET N+P 30V 2.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9952TRPBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 150 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF9952PBFTR; IRF9952TRPBF; IRF9952TRPBFTR

6
100
0.1
100
10
0.1
10
1
1
3.0
0.1
TOP
BOTTOM - 3.0V
-V
-V
T = 25°C
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
4.0
J
GS
VGS
DS
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 150°C
J
5.0
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
6.0
DS
J
= -10V
-3.0V
7.0
8.0
10
A
A
100
0.1
100
10
0.1
10
1
1
0.4
0.1
TOP
BOTTOM - 3.0V
-V
-V
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
0.6
SD
VGS
DS
T = 150°C
, Source-to-Drain Voltage (V)
J
, Drain-to-Source Voltage (V)
0.8
1
T = 25°C
J
1.0
20µs PULSE WIDTH
T = 150°C
J
www.irf.com
-3.0V
1.2
V
GS
= 0V
1.4
10
A
A