IRF8915PBF International Rectifier, IRF8915PBF Datasheet - Page 3

• Manufacturer Part Number: IRF8915PBF
• Description: MOSFET 2N-CH 20V 8.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8915PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 540pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 27 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.9 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 3.6 ns
• Gate Charge Qg: 4.9 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 12 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
100
100
0.1
0.1
10
10
Fig 3. Typical Transfer Characteristics
1
1
Fig 1. Typical Output Characteristics
0.1
1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
2.5V
1
3
T J = 25°C
V DS = 10V
≤60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
4
10
5
TOP
BOTTOM
6
VGS
10V
8.0V
5.5V
4.5V
3.5V
3.0V
2.8V
2.5V
100
7
100
0.1
1.5
1.0
0.5
10
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
I D = 8.9A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
0
1
20
2.5V
40
≤ 60µs PULSE WIDTH
Tj = 150°C
60 80 100 120 140 160
10
TOP
BOTTOM
VGS
10V
8.0V
5.5V
4.5V
3.5V
3.0V
2.8V
2.5V
100
3