IRF7905TRPBF International Rectifier, IRF7905TRPBF Datasheet - Page 6
IRF7905TRPBF
Manufacturer Part Number
IRF7905TRPBF
Description
MOSFET DUAL N-CH 30V 8.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7905TRPBF.pdf
(10 pages)
Specifications of IRF7905TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2W
Fet Type
2 N-Channel (Dual)
Gate Charge (qg) @ Vgs
6.9nC @ 4.5V
Vgs(th) (max) @ Id
2.25V @ 25µA
Current - Continuous Drain (id) @ 25° C
7.8A, 8.9A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21.8 mOhm @ 7.8A, 10V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
21.3 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8.9 A
Power Dissipation
2.0 W
Mounting Style
SMD/SMT
Gate Charge Qg
6.9 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7905TRPBF
Manufacturer:
IR
Quantity:
30 000
Part Number:
IRF7905TRPBF
Manufacturer:
IR
Quantity:
20 000
Fig 19. Maximum Drain Current vs. Ambient Temp.
Fig 23. Maximum Avalanche Energy vs. Drain Current
6
Fig 21. Threshold Voltage vs. Temperature
2.2
2.0
1.8
1.6
1.4
1.2
50
40
30
20
10
8
6
4
2
0
0
-75
25
25
-50
Starting T J , Junction Temperature (°C)
50
50
T J , Ambient Temperature (°C)
-25
T J , Temperature ( °C )
Q1 - Control FET
0
75
75
25
50
100
100
TOP
BOTTOM
I D = 250µA
75
100
125
125
3.5A
3.0A
I D
6.2A
Typical Characteristics
125 150
150
150
Fig 24. Maximum Avalanche Energy vs. Drain Current
Fig 20. Maximum Drain Current vs. Ambient Temp.
Fig 22. Threshold Voltage vs. Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
80
60
40
20
10
0
8
6
4
2
0
25
25
-75
-50
Starting T J , Junction Temperature (°C)
50
50
T J , Ambient Temperature (°C)
-25
Q2 - Synchronous FET
T J , Temperature ( °C )
0
75
75
25
50
100
100
I D = 250µA
TOP
BOTTOM
75
www.irf.com
100
125
125
3.7A
3.2A
7.1A
I D
125 150
150
150