IRF7304PBF International Rectifier, IRF7304PBF Datasheet - Page 7
![MOSFET 2P-CH 20V 4.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7304PBF
Manufacturer Part Number
IRF7304PBF
Description
MOSFET 2P-CH 20V 4.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet
1.IRF7304TRPBF.pdf
(9 pages)
Specifications of IRF7304PBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
610pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual P-Channel
Resistance Drain-source Rds (on)
140 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 4.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
33 ns
Gate Charge Qg
14.7 nC
Minimum Operating Temperature
- 55 C
Rise Time
26 ns
Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.09Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7304PBF
Manufacturer:
IR
Quantity:
20 000
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-