IRF7303PBF International Rectifier, IRF7303PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7303PBF
• Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7303PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.05Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 4.9A
• Power Dissipation: 2W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7303
1 0 0
1000
0 . 1
1 0
800
600
400
200
1
0 . 0
0
1
Fig 7. Typical Source-Drain Diode
Fig 5. Typical Capacitance Vs.
T = 150 °C
V
J
V
S D
0 . 5
D S
C
C
C
Drain-to-Source Voltage
, Source-to-Drain Voltage (V )
rs s
is s
o s s
V
C
C
C
Forward Voltage
, D rain-to-S ource Voltage (V )
G S
is s
rs s
os s
= 0 V,
= C
= C
= C
1 . 0
T = 25 °C
g s
ds
gd
J
+ C
+ C
10
gd
gd
f = 1 MH z
1 . 5
, C
ds
S HO R TED
2 . 0
V
G S
= 0 V
2 . 5
100
A
A
100
20
16
12
10
8
4
0
Fig 8. Maximum Safe Operating Area
1
0
0.1
I
V
D
T
T
Single Pulse
DS
A
J
Fig 6. Typical Gate Charge Vs.
= 2 .4A
= 25 C
= 150 C
= 2 4V
OPERATION IN THIS AREA LIMITED
V
Gate-to-Source Voltage
Q , Total Gate Charge (nC )
DS
5
°
°
G
, Drain-to-Source Voltage (V)
1
10
BY R
DS(on)
FO R TES T C IR CU IT
15
SEE FIG U R E 12
10
20
100us
1ms
10ms
100
25
A