IRF7341PBF International Rectifier, IRF7341PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7341PBF
• Description: MOSFET 2N-CH 55V 4.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7341PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 13 ns
• Gate Charge Qg: 24 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 3.2 ns
• Module Configuration: Dual
• Continuous Drain Current Id: 4.7A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
100
10
10
1
1
0.1
3
TOP
BOTTOM
V
DS
V
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.5V
3.0V
4.5V
GS
, Drain-to-Source Voltage (V)
T = 25 C
J
, Gate-to-Source Voltage (V)
1
4
°
3.0V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 150 C
J
10
5
= 25V
°
°
100
6
100
0.1
10
100
1
10
0.2
1
0.1
TOP
BOTTOM
V
V
T = 150 C
SD
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.5V
3.0V
4.5V
J
0.5
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
°
IRF7341PbF
1
0.8
T = 25 C
J
3.0V
20µs PULSE WIDTH
T = 150 C
J
10
°
1.1
V
°
GS
= 0 V
3
1.4
100