IRF7907TRPBF International Rectifier, IRF7907TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7907TRPBF
• Description: MOSFET DUAL N-CH 30V 9.1A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7907TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Current - Continuous Drain (id) @ 25° C: 9.1A, 11A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.1 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
4
10000
1000
0.01
1000
100
100
0.1
12
10
10
10
8
6
4
2
0
1
Fig 11. Maximum Safe Operating Area
0.1
0
1
I D = 7.0A
T A = 25°C
Tj = 150°C
Single Pulse
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Q G Total Gate Charge (nC)
4
Q1 - Control FET
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
V DS = 24V
VDS= 15V
VDS= 6.0V
Coss
Crss
Ciss
1msec
8
f = 1 MHZ
10
100msec
10msec
100µsec
10
12
Typical Characteristics
100
16
100
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
10000
1000
1000
0.01
100
100
0.1
10
12
10
1
Fig 12. Maximum Safe Operating Area
8
6
4
2
0
0.1
1
0
I D = 8.8A
T A = 25°C
Tj = 150°C
Single Pulse
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
5
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Q G Total Gate Charge (nC)
Q2 - Synchronous FET
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
1
V DS = 24V
VDS= 15V
VDS= 6.0V
Ciss
Coss
Crss
15
1msec
f = 1 MHZ
10
100µsec
100msec
10msec
10
20
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25
100
30
100