IRF7389PBF International Rectifier, IRF7389PBF Datasheet - Page 8
![MOSFET N+P 30V 5.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7389PBF
Manufacturer Part Number
IRF7389PBF
Description
MOSFET N+P 30V 5.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7389TRPBF.pdf
(10 pages)
Specifications of IRF7389PBF
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 5.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.3A, 5.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
650pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
N amd P
Current, Drain
7.3/-5.3 N/P A
Package Type
SO-8
Power Dissipation
2.5/2.5 N/P W
Resistance, Drain To Source On
0.046/0.098 N/P Ohm
Thermal Resistance, Junction To Ambient
50/50 N/P °C/W
Voltage, Drain To Source
30/-30 N/P V
Voltage, Gate To Source
+-20 V
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
46 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.3 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
17 ns, 32 ns
Gate Charge Qg
22 nC
Minimum Operating Temperature
- 55 C
Rise Time
8.9 ns, 13 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7389PBF
Manufacturer:
IR
Quantity:
20 000
8
100
1400
1200
1000
0.1
10
0.00001
800
600
400
200
1
0
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
V
DS
, Drain-to-Source Voltage (V)
C
(THERMAL RESPONSE)
C
C
0.0001
GS
rss
iss
oss
SINGLE PULSE
10
0.001
t , Rectangular Pulse Duration (sec)
1
0.01
100
A
20
16
12
8
4
0
0.1
0
I =
D
-4.9A
1. Duty factor D = t / t
2. Peak T = P
Notes:
Q , Total Gate Charge (nC)
G
10
1
J
DM
20
x Z
V
1
DS
thJA
P
2
=-15V
DM
+ T
10
www.irf.com
A
t
1
30
t
2
40
100