IRF7319PBF International Rectifier, IRF7319PBF Datasheet - Page 8

• Manufacturer Part Number: IRF7319PBF
• Description: MOSFET N+P 30V 4.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7319PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A, 4.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 46 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 17 ns, 32 ns
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8.9 ns, 13 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.1
1400
1200
1000
10
0.00001
800
600
400
200
1
0
1
0.50
0.20
0.10
0.05
0.02
0.01
V
DS
, Drain-to-Source Voltage (V)
(THERMAL RESPONSE)
0.0001
C
C
C
GS
rss
iss
oss
SINGLE PULSE
10
0.001
t , Rectangular Pulse Duration (sec)
1
0.01
100
A
20
16
12
0.1
8
4
0
0
I =
D
-4.9A
1. Duty factor D = t / t
2. Peak T = P
Notes:
Q , Total Gate Charge (nC)
G
10
1
J
DM
x Z
20
1
V
DS
thJA
P
2
DM
=-15V
+ T
10
A
t
1
30
t
2
100
40