IRF7351TRPBF International Rectifier, IRF7351TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7351TRPBF
• Description: MOSFET N-CH DUAL 60V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7351TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1330pF @ 30V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7351TRPBFTR

100000
4
10000
1000
100
100
0.1
10
10
1
Fig 7. Typical Source-Drain Diode
0.0
Fig 5. Typical Capacitance vs.
1
Drain-to-Source Voltage
C rss
C oss
C iss
0.2
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
T J = 150°C
0.4
0.6
f = 1 MHZ
10
T J = 25°C
0.8
V GS = 0V
1.0
1.2
100
1000
100
0.1
10
14.0
12.0
10.0
1
8.0
6.0
4.0
2.0
0.0
0.01
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
T A = 25°C
Tj = 150°C
Single Pulse
0
I D = 6.4A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
DC
0.1
5
Q G , Total Gate Charge (nC)
V DS = 48V
V DS = 30V
V DS = 12V
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
1
15
1msec
10
20
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25
100
100µsec
30
1000
35