IRF7910TRPBF International Rectifier, IRF7910TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7910TRPBF
• Description: MOSFET DUAL N-CH 12V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7910TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Vgs(th) (max) @ Id: 2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 10A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 8A, 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7910PbF
Static @ T
V
Avalanche Characteristics
Diode Characteristics
R
Dynamic @ T
I
I
Symbol
V
∆V
Symbol
E
I
V
DSS
GSS
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
Symbol
I
I
t
Q
t
Q
AR
GS(th)
SM
d(on)
d(off)
S
rr
rr
DS(on)
r
f
(BR)DSS
fs
AS
SD
2
iss
oss
rss
rr
rr
g
gs
gd
oss
(BR)DSS
/∆T
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Static Drain-to-Source On-Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
J
Diode Forward Voltage
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
0.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
12
–––
–––
––– 0.85
––– 0.70 –––
–––
–––
–––
–––
18
11.5
1730 –––
1340 –––
0.01
–––
–––
–––
–––
–––
––– -200
–––
–––
–––
330
20
4.4
5.2
9.4
6.3
50
60
51
60
17
16
22
16
–––
–––
100
250
200
2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.3
15
50
90
90
26
1.8
75
77
79
mΩ
V/°C
µA
nA
nC
nC
nC
ns
pF
ns
ns
V
V
S
V
Typ.
–––
–––
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
I
D
D
GS
GS
GS
DS
DS
DS
GS
GS
J
J
J
J
DS
DS
GS
GS
DD
G
GS
GS
DS
= 8.0A
= 8.0A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8Ω
= V
= 9.6V, V
= 9.6V, V
= 0V, I
= 4.5V, I
= 2.8V, I
= 12V
= -12V
= 6.0V, I
= 6.0V
= 6.0V
= 4.5V
= 0V, V
= 6.0V
= 4.5V
= 0V
GS
, I
D
S
F
D
ƒ
DS
Conditions
= 250µA
D
D
S
F
Conditions
D
Conditions
= 8.0A, V
= 8.0A, V
GS
GS
= 250µA
= 8.0A
= 8.0A, V
= 5.0A
= 8.0A, V
= 8.0A
= 10V
Max.
100
8.0
= 0V, T
= 0V
ƒ
ƒ
D
www.irf.com
= 1mA
GS
R
ƒ
J
GS
R
=12V
= 125°C
G
=12V
= 0V
= 0V
Units
mJ
A
ƒ
ƒ
S
D