STS9D8NH3LL STMicroelectronics, STS9D8NH3LL Datasheet - Page 10

• Manufacturer Part Number: STS9D8NH3LL
• Description: MOSFET DUAL N-CHAN 30V 9A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS9D8NH3LL

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A, 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 857pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 8 A, 9 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6030-2

Test circuit
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Figure 24. Switching times test circuit for
Figure 26. Test circuit for inductive load
Figure 28. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 25. Gate charge test circuit
Figure 27. Unclamped Inductive load test
Figure 29. Switching time waveform
circuit
STS9D8NH3LL