IRF7325PBF International Rectifier, IRF7325PBF Datasheet - Page 7

• Manufacturer Part Number: IRF7325PBF
• Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7325PBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2020pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Resistance Drain-source Rds (on): 24 m Ohms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 7.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 180 ns
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 9.8 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1.0
0.8
0.6
0.4
-75
-50
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-25
T J , Temperature ( °C )
0
25
50
I D = -250µA
75
100
125
150
100
80
60
40
20
0
0.001
0.010
Typical Power Vs. Time
0.100
IRF7325PbF
Time (sec)
1.000
10.000
100.000
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