IRF7754TRPBF International Rectifier, IRF7754TRPBF Datasheet - Page 3
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IRF7754TRPBF
Manufacturer Part Number
IRF7754TRPBF
Description
MOSFET P-CH DUAL 12V 5.5A 8TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7754TRPBF.pdf
(9 pages)
Specifications of IRF7754TRPBF
Package / Case
8-TSSOP
Mounting Type
Surface Mount
Power - Max
1W
Fet Type
2 P-Channel (Dual)
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Vgs(th) (max) @ Id
900mV @ 250µA
Current - Continuous Drain (id) @ 25° C
5.5A
Drain To Source Voltage (vdss)
12V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 5.4A, 4.5V
Configuration
Dual
Transistor Polarity
Dual P-Channel
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 5.5 A
Power Dissipation
1 W
Mounting Style
SMD/SMT
Gate Charge Qg
22 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
0.01
100
100
0.1
0.1
10
10
1
Fig 1. Typical Output Characteristics
1
Fig 3. Typical Transfer Characteristics
1.0
0.1
T = 150 C
-V
J
1.2
-V DS , Drain-to-Source Voltage (V)
GS
, Gate-to-Source Voltage (V)
°
1
1.4
-1.0V
T = 25 C
20µs PULSE WIDTH
Tj = 25°C
J
V
20µs PULSE WIDTH
1.6
°
DS
10
= -10V
TOP
BOTTOM -1.0V
1.8
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
2.0
100
100
0.1
10
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
D
-5.5A
-V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
-1.0V
20µs PULSE WIDTH
Tj = 150°C
IRF7754
10
TOP
BOTTOM -1.0V
V
GS
°
=
VGS
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-7.0V
-4.5V
3
100