IRF7105PBF International Rectifier, IRF7105PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7105PBF
• Description: MOSFET N/P-CH DUAL 25V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7105PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: N amd P
• Current, Drain: 3.5/-2.3 N/P A
• Package Type: SO-8
• Power Dissipation: 2/2 N/P W
• Resistance, Drain To Source On: 0.1/0.25 N/P Ohm
• Thermal Resistance, Junction To Ambient: 62.5/62.5 N/P °C/W
• Voltage, Drain To Source: 25 N V
• Voltage, Gate To Source: +-20 V
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 25V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 160 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.5 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 25 ns, 37 ns
• Gate Charge Qg: 9.4 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 9 ns, 13 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
12V
V
GS
Same Type as D.U.T.
Current Regulator
.2µF
50KΩ
-3mA
Current Sampling Resistors
.3µF
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G
D.U.T.
I
D
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DS
V
90%
10%
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DS
GS
V
G
Q
t
d(on)
GS
≤ 0.1 %
≤ 1
t
r
Q
Charge
Q
GD
G
t
d(off)
www.irf.com
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