IRFI4019H-117P International Rectifier, IRFI4019H-117P Datasheet - Page 5

• Manufacturer Part Number: IRFI4019H-117P
• Description: MOSFET N-CH 150V 8.7A TO-220FP-5
• Manufacturer: International Rectifier

Specifications of IRFI4019H-117P

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 810pF @ 25V
• Power - Max: 18W
• Mounting Type: Through Hole
• Package / Case: TO-220-5 Full Pack (Straight Leads)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 95 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.7 A
• Power Dissipation: 18 W
• Mounting Style: Through Hole
• Gate Charge Qg: 13 nC
• Minimum Operating Temperature: - 40 C
• For Use With: IRAUDAMP7S - BOARD REF DESIGN 2CH AUDIO AMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 12. On-Resistance Vs. Gate Voltage
0.5
0.4
0.3
0.2
0.1
0.0

‚
4
+
-
V GS , Gate-to-Source Voltage (V)
5
Fig 14.
6
ƒ
+
-
•
•
•
•
SD
7
•
•
•
T J = 125°C
T J = 25°C
8
I D = 5.2A
-
„
G
9
+
10
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
for HEXFET
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
350
300
250
200
150
100
Body Diode Forward
50
0
25
Diode Recovery
Current
®
Power MOSFETs
dv/dt
Forward Drop
Starting T J , Junction Temperature (°C)
di/dt
50
D =
Period
P.W.
75
V
V
I
SD
GS
DD
100
TOP
BOTTOM
=10V
125
0.91A
1.1A
5.2A
I D
5
150