FMM75-01F IXYS, FMM75-01F Datasheet
FMM75-01F
Manufacturer Part Number
FMM75-01F
Description
MOSFET PWR 100V ISOPLUS I4-PAC-5
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.FMM75-01F.pdf
(2 pages)
Specifications of FMM75-01F
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Mounting Type
Through Hole
Package / Case
ISOPLUS i4-PAC™
Vdss, Max, (v)
100
Id25, Tc = 25°c, (a)
75
Rds(on), Max, Tj = 25°c, (ohms)
25
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
180
Tf, Typ, (ns)
60
Tr, Typ, (ns)
60
Rthjc, Max, (c/w)
0.50
Package Style
ISOPLUS i4-PAC (5 - Lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
HiPerFET
Phaseleg Topology
in ISOPLUS i4-PAC
Preliminary data
Symbol
V
V
I
I
I
I
dv/dt
E
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
V
t
R
R
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
MOSFET T1/T2
D25
D90
F25
F90
DSS
GSS
d(off)
d(on)
r
f
rr
GS
AR
GSth
F
DSS
DSon
g
gd
thJC
thJH
gs
Conditions
T
T
T
(body diode) T
(body diode) T
V
T
T
Conditions
V
V
V
V
(body diode) I
(body diode) I
with heat transfer paste
VJ
C
C
VJ
C
DS
GS
DS
DS
GS
= 25°C
= 90°C
= 25°C
= 25°C to 150°C
= 150°C
V
V
I
< V
= 20 V; I
= V
= 10 V; I
= ±20 V; V
D
GS
GS
TM
= I
= 10 V; V
= 10 V; V
DSS
DSS
D90
; I
; V
; R
Power MOSFET
F
D
D
GS
F
≤ 300A;⎮di
= I
= 4 mA
G
F
= 37.5A; -di/dt = 100A/µs; V
DS
C
C
= 0 V; T
= 2 Ω
= 75 A; V
D90
DS
= 25°C
= 90°C
DS
= 0 V
TM
= 0.5 • V
= 0.5 • V
T
VJ
VJ
GS
F
= 25°C
= 125°C
/dt⎮≤ 100A/µs; R
= 0 V
DSS
DSS
(T
; I
VJ
D
= I
= 25°C, unless otherwise specified)
D90
DS
= 25V
G
= 2 Ω
min.
Characteristic Values
2
Maximum Ratings
0.25
0.93
180
300
typ.
1.2
18
35
85
20
60
80
60
100
±20
100
75
50
60
30
5
3
5
4
1
2
max.
200 nA
0.3 mA
1.5
0.5 K/W
T2
T1
25 mΩ
4
V/ns
K/W
mA
mJ
nC
nC
nC
ns
ns
ns
ns
ns
V
V
A
A
A
A
V
V
I
V
R
Features
• HiPerFET
• ISOPLUS i4-PAC
Applications
• drives and power supplies
• battery or fuel cell powered
• automotive, industrial vehicle etc.
• secondary side of mains power
D25
- low R
- low gate charge for high frequency
- unclamped inductive switching (UIS)
- dv/dt ruggedness
- fast intrinsic reverse diode
- isolated back surface
- low coupling capacity between pins
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
supplies
DSS
DSon typ.
and heatsink
operation
capability
1
DSon
5
TM
= 75 A
= 100 V
= 18 mΩ Ω Ω Ω Ω
technology
FMM 75-01F
TM
package
1 - 2
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FMM75-01F Summary of contents
Page 1
... I = 37.5A; -di/dt = 100A/µ thJC R with heat transfer paste thJH IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Maximum Ratings 100 ± ...
Page 2
... pin - backside metal S A Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Dimensions 0.0394") Maximum Ratings °C 0 -55...+15 °C -55...+125 2500 V~ 20...120 ...