2N7002DW L6327 Infineon Technologies, 2N7002DW L6327 Datasheet - Page 6

• Manufacturer Part Number: 2N7002DW L6327
• Description: MOSFET 2N-CH 60V 300MA SOT363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of 2N7002DW L6327

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 20pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000408436

Rev.2.2
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
10
10
DS
=f(T
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz; T
-20
=0.3 A; V
10
20
98 %
GS
V
T
=10 V
DS
j
[°C]
[V]
60
j
typ
=25°C
20
100
Coss
140
Ciss
Crss
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
3.2
2.8
2.4
1.6
1.2
0.8
0.4
10
=f(T
SD
2
0
-1
-2
-3
0
-60
)
0
j
); V
D
j
DS
-20
=V
0.4
GS
; I
20
D
150 °C
=250 µA
V
T
SD
j
0.8
[°C]
25 °C
60
[V]
2 %
98 %
typ
25 °C, 98%
100
1.2
150 °C, 98%
2N7002DW
140
2011-06-16
1.6