NTJD4001NT2G ON Semiconductor, NTJD4001NT2G Datasheet - Page 4

• Manufacturer Part Number: NTJD4001NT2G
• Description: MOSFET N-CH DUAL 30V SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD4001NT2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 1.3nC @ 5V
• Input Capacitance (ciss) @ Vds: 33pF @ 5V
• Power - Max: 272mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
50
40
30
20
10
100
0.000001
0
0.1
10
10
1
C
C
iss
rss
D = 0.5
0.2
0.1
0.05
0.02
0.01
V
SINGLE PULSE
DS
5
= 0 V
Figure 7. Capacitance Variation
V
0.00001
GS
0
V
V
GS
DS
TYPICAL PERFORMANCE CURVES
= 0 V
5
0.0001
0.08
0.06
0.04
0.02
0.1
10
0
0.5
Figure 9. Diode Forward Voltage vs. Current
V
T
15
V
J
GS
SD
= 25°C
0.001
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Thermal Response
0.55
T
J
20
= 25°C
http://onsemi.com
C
C
C
PULSE TIME t,(s)
iss
oss
rss
25
0.6
0.01
4
0.65
(T
5
4
3
2
1
0
0
J
0.1
= 25°C unless otherwise noted)
Figure 8. Gate−to−Source Voltage vs. Total
Q
GS
0.7
0.2
Q
G
, TOTAL GATE CHARGE (nC)
1
0.75
Q
0.4
Gate Charge
GD
Q
G
10
0.6
100
0.8
I
T
D
J
= 0.1 A
= 25°C
1000
1